'j.s.iis.ii <~>e.ml-(lona.uctoi iptooud^i, one. 20 stern ave. springfield, new jersey 07081 pnp power transistors complementary to the d40d series d41d is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from dc to greater than 1.0 mhz; series, shunt and switching regulators; low and high frequency inverters/converters; and many others. features: ? high free-air power dissipation ? pnp complement to d40d npn ? low collector saturation voltage (-0.5v typ. @ 1.0a lc) ? excellent linearity ? fast switching d41d series -30 - -60 volts -1 amp, 6.25 watts case style to-202 dimensions are in inches and (millimeters) 095-0106 413-2 h67) type t0202 term 1 emiites term 2 base term 3 collector tab collector maximum ratings (ta = 25 c) (unless otherwise specified) rating collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous peako) base current ? continuous total power dissipation @ ta = 25 c @ tc = 25c operating and storage junction temperature range symbol vceo vces vebo ic 'cm ib pd tj.tstg D41D1.2 -30 -45 -5 -1 -1.5 -.5 1.67 6.25 -55 to +150 d41d4, 5 -45 -60 -5 -1 -1.5 -.5 1.67 6.25 -55 to +150 d41d7, 8 -60 -75 -5 -1 -1.5 -.5 1.67 6.25 -5510+150 units volts volts volts a a watts c thermal characteristics (1) pulse test pulse width = 300ms duty cycle < 2%. thermal resistance, junction to ambient thermal resistance, junction to case maximum lead temperature for soldering purposes: ve" from case for 5 seconds rftja r0jc tl 75 20 +260 75 20 +260 75 20 +260 c/w c/w c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (tc = 25 c) (unless otherwise specified) characteristic symbol min typ max unit off characteristics'1' collector-emitter sustaining voltage D41D1.2 (lc = 10ma) d41d4, 5 d41d7, 8 collector cutoff current ( vce = rated vceo) tc = 25 c (vce = rated vces) tc = 1 50 c emitter cutoff current (veb = sv) vceo(sus) ices 'ebo -30 -45 -60 ? ? ? -1 ? ? -0.1 -0.1 volts m m second breakdown second breakdown with base forward biased fbsoa see figure 7 on characteristics dc current gain d41 d1 . 4, 7 (lc = 1 00ma, vce = 2v) d41 d2, 5, 8 d41 d1.4.7 (ic = 1a, vce = 2v) d41d2 d41d5, 8 collector-emitter saturation voltage (1c = -500ma, ib = -50ma) d41 d1 , 2, 4, 5 d41d7, 8 base-emitter saturation voltage (lc = -500ma, ib = -50ma) hfe hfe vce(sat) vbe(sat) 50 120 10 20 10 ? ? ? ? ? 150 360 ? 0.5 1.0 1.5 ? volts volts dynamic characteristics collector capacitance (vcb = 10v, f = 1mnz) current-gain ? bandwidth product (lc = -20ma, vce = -10v) ccbo fr ? ? 10 150 ? ? pf mhz switching characteristics m m r ? h n resistive load delay time + rise time storage time fall time 1c = -1a. ib1 vcc = -30v, t_ - 2 ip ^ = -0.1a (1) pulse test pw = 300ms duty cycle < 2%. ?m^oi _? ^. ?- ? ? - tj- 1?' c j- i?'c j.-t?-e =5 ^ ?- ^ -^?, - ysff" ?\^ ^\ "^^_ *^ \ n j ^ l\ td + v ts tf mo too ? i '? ?1 '" ~? ? - ? ? ? 50 75 40 ? ? ? ns ?vnrc --f 'r- ?? *^* t-?. ?^. -? -^j ?^^ ^*^ m ^ ^>^^ ^ 1 >t.? \ s \ v>, s h -k> -?? -xf -' -" -?? -?' ic-auicnn.cum.t-.. i c-cou?t? ????-.. fig. 1 fig. 2 typical hpe vs.
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